Electronic structure of 8-hydroxyquinoline aluminum/LiF/Al interface for organic electroluminescent device studied by ultraviolet photoelectron spectroscopy
Electronic structure of 8-hydroxyquinoline aluminum/LiF/Al interface for organic electroluminescent device studied by ultraviolet photoelectron spectroscopy
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DOI：
10.1063/1.122583
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发表时间：
1998-11-08
影响因子：
4
通讯作者：
Taga, Y
中科院分区：
文献类型：
--
作者：
Mori, T;Fujikawa, H;Taga, Y
用紫外光电子能谱（UV-XPS）研究了8-羟基喹啉铝（Alq（3））LiF/Al和Alq（3）/Al界面的电子结构。观察到Alq（3）层的最高占据分子轨道能级和真空能级由于插入薄LiF层而发生的移动。该结果表明，Alq（3）/Al界面处的薄LiF层降低了电子从Al注入到Alq（3）的势垒高度。因此，我们得出结论，在具有薄LiF层的有机电致发光器件中，驱动电压的降低归因于势垒高度的降低。(C)1998年美国物理学会。[S0003-6951（98）00345-3]。
Electronic structures of the 8-hydroxyquinoline aluminum (Alq(3))LiF/Al and Alq(3)/Al interfaces were measured by ultraviolet photoelectron spectroscopy. Shifts of the highest occupied molecular orbital level and the vacuum level of the Alq(3) layer due to insertion of a thin LiF layer were observed. This result indicates that the thin LiF layer at the Alq(3)/Al interface reduces barrier height for electron injection from the Al to Alq(3). We, therefore, conclude that lowering of the driving voltage in an organic electroluminescent device with a thin LiF layer is attributable to the reduction of the barrier height. (C) 1998 American Institute of Physics. [S0003-6951(98)00345-3].