Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits
Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits
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DOI：
10.1109/drc.2017.7999426
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发表时间：
2017-06
期刊：
影响因子：
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通讯作者：
J. Trommer;A. Heinzig;S. Slesazeck;U. Mühle;M. Löffler;D. Walter;C. Mayr;T. Mikolajick;W. Weber
中科院分区：
文献类型：
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作者：
J. Trommer;A. Heinzig;S. Slesazeck;U. Mühle;M. Löffler;D. Walter;C. Mayr;T. Mikolajick;W. Weber
锗由于其高空穴迁移率而成为未来超大规模集成电路器件的一种有前途的材料。然而，由于0.66 eV的低带隙，基于Ge的器件通常遭受高反向结泄漏，因此具有高静态功耗。在本文中，我们应用了一种具有多个独立栅极的纳米线结构来抑制关断方向的泄漏，以实现低于10−9 A/μm的关断电流水平。此外，相同的无掺杂器件的极性可以在单极p型和n型功能之间动态切换，而不使用任何掺杂剂。该特性提供了CMOS无法实现的各种破坏性电路设计可能性，例如在硬件安全领域[1]。
Germanium is a promising material for future VLSI devices, due to its high hole mobility. However, due to the low bandgap of 0.66 eV Ge based devices typically suffer from high reverse junction leakage und therefore high static power dissipation. In this paper, we apply a nanowire structure with multiple independent gates to suppress the leakage in off-direction to achieve off-current levels below 10−9 A/μm. In addition, the polarity of the same doping-free device can be dynamically switched between unipolar p- and n-type function, without the use of any dopants. This feature offers a variety of disrupting circuit design possibilities not accessible with CMOS, for example in the area of hardware security [l].