A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment
A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment
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DOI：
10.1063/1.4823530
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发表时间：
2013-09
影响因子：
4
通讯作者：
T. Ishijima;K. Nosaka;Yasunori Tanaka;Y. Uesugi;Yousuke Goto;H. Horibe
中科院分区：
文献类型：
--
作者：
T. Ishijima;K. Nosaka;Yasunori Tanaka;Y. Uesugi;Yousuke Goto;H. Horibe
本文提出了一种利用超纯水中产生的多泡微波等离子体去除光刻胶的工艺。对未注入光刻胶和B、P、As等离子注入光刻胶在70keV的加速能量下进行了5×10~(15)个原子/厘米~2的高离子处理，获得了大于1μm/m in的快速去除速率。当多泡微波等离子体与光刻胶薄膜之间的距离增加几毫米时，光刻胶的去除速率急剧下降，这表明羟基等短寿命自由基对光刻胶的高速去除有影响。
This paper proposes a photoresist removal process that uses multibubble microwave plasma produced in ultrapure water. A non-implanted photoresist and various kinds of ion-implanted photoresists such as B, P, and As were treated with a high ion dose of 5 × 1015 atoms/cm2 at an acceleration energy of 70 keV; this resulted in fast removal rates of more than 1 μm/min. When the distance between multibubble microwave plasma and the photoresist film was increased by a few millimeters, the photoresist removal rates drastically decreased; this suggests that short-lived radicals such as OH affect high-speed photoresist removal.