Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
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激光辅助分解三甲基镓、三甲基铝和胂沉积 Ga、Al 和 As 层
DOI：
10.1143/jjap.29.1523
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
H. Kukimoto
中科院分区：
文献类型：
--
作者：
Y. Ban;H. Komatsu;M. Takechi;M. Ishizaki;H. Kukimoto
研究了以三甲基镓、三甲基铝和砷化氢为源材料，采用ArF准分子激光辅助化学气相沉积法在熔融石英（Suprasil）衬底上沉积Ga、Al和As层的沉积速率与衬底温度的关系。Ga和Al的沉积速率在100°C至400°C的范围内与衬底温度无关，然后随着衬底温度高于400°C而增加。另一方面，As沉积速率随着衬底温度的升高而显著降低，直到300°C。砷沉积的结果可以定性地解释为三个竞争过程的激光分解砷和激光和/或热解吸的As原子。
We have investigated the substrate temperature dependence of deposition rates for Ga, Al and As layers formed on fused quartz (Suprasil) substrates by ArF excimer laser-assisted chemical vapor deposition using trimethylgallium, trimethylaluminum and arsine as source materials, respectively. The deposition rates for Ga and Al were independent of substrate temperature in the range from 100°C to 400°C, and then increased with substrate temperature above 400°C. On the other hand, the As deposition rate decreased dramatically with increasing substrate temperature up to 300°C. The result of As deposition can be explained qualitatively by three competing processes of the laser decomposition of arsine and laser and/or thermal desorptions of the As atom.