Afterglow, low-temperature radioluminescence and thermoluminescence of Lu

Afterglow, low-temperature radioluminescence and thermoluminescence of Lu
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DOI：
10.1016/j.nima.2004.08.060
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发表时间：
2005-01
期刊：
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
影响因子：
1.4
通讯作者：
L. A. Kappers;R. Bartram;D. Hamilton;C. Brecher;A. Lempicki
L. A. Kappers;R. Bartram;D. Hamilton;C. Brecher;A. Lempicki
中科院分区：
物理与天体物理3区
文献类型：
--
作者：
L. A. Kappers;R. Bartram;D. Hamilton;C. Brecher;A. Lempicki

文献摘要

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对连续伽马射线激发下的热释光（TL）和闪烁光输出的比较表明，可逆辐射损伤增强了陶瓷Lu2O3:Eu中深孔阱的浓度，初步归因于阴离子Frenkel缺陷。浅层电子阱和空穴阱暂定归因于晶界的表面态。浅阱中的电子充当非辐射复合中心。脉冲x射线激发后异常持续余辉的模型是基于在- 135°C下延长伽马射线照射后从TL推断出的空穴阱的连续分布。
Comparison of thermoluminescence (TL) and scintillation light outputs with continuous gamma-ray excitation reveals that the concentration of deep hole traps in ceramic Lu2O3:Eu, tentatively attributed to anion Frenkel defects, is enhanced by reversible radiation damage. Shallow electron and hole traps are tentatively attributed to surface states at grain boundaries. Electrons in shallow traps serve as non-radiative recombination centers. A model for anomalously persistent afterglow following pulsed X-ray excitation is based on a continuous distribution of hole traps inferred from TL following extended gamma-ray irradiation at −135°C.