Damage accumulation mechanism in PIN diode limiters induced via multiple microwave pulses
Damage accumulation mechanism in PIN diode limiters induced via multiple microwave pulses
复制标题
多次微波脉冲引起的 PIN 二极管限制器损伤累积机制
DOI：
10.1038/s41598-020-58710-3
复制
发表时间：
2020-02-03
影响因子：
4.6
通讯作者：
Chen, Zhidong
中科院分区：
文献类型：
--
作者：
Zhao, Jingtao;Chen, Quanyou;Chen, Zhidong
正-本征-负（PIN）二极管广泛用作限制器，以保护射频（RF）接收器系统和通信前端中的敏感元件免受损坏。然而，PIN二极管限制器可以烧毁，由于微波脉冲耦合通过前端的RF接收机系统。PIN限幅器的损伤过程和损伤机理无疑是一个重要的研究课题。本文通过注入实验研究了PIN限幅器在微波脉冲作用下的损伤积累过程。损害程度之间的关系（即，插入损耗）和注入脉冲的数量。理论上预测和实验验证的最高温度标准烧毁PIN限制器是不准确的，它进一步观察到，PIN二极管限制器的插入损耗的显着变化，只有当更多的能量被注入到限制器通过微波脉冲。
Positive-intrinsic-negative (PIN) diodes are widely used as limiters to protect sensitive components from damage in radio frequency (RF) receiver systems and communication front-ends. However, PIN diode limiters can be burnt out due to the microwave pulses coupling through the front-end of RF receiver systems. The damage processes and mechanisms in PIN limiters are undoubtedly important topics. Here, the damage accumulation process in PIN limiters induced by external microwave pulses is studied via the injection experiments. The relationship between the degree of damage (i.e., insertion loss) in the limiters and number of the injected pulses is reported. The maximum temperature criterion for burnout in PIN limiters is theoretically predicted and experimentally verified not accurate, and it is further observed that the insertion loss of the PIN diode limiter changes significantly only if more energy is injected into the limiter via microwave pulses.