Noise in Broad-Band GaAs MESFET Amplifiers with Parallel Feedback
Noise in Broad-Band GaAs MESFET Amplifiers with Parallel Feedback
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具有并行反馈的宽带 GaAs MESFET 放大器中的噪声
DOI：
10.1109/tmtt.1982.1131018
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发表时间：
1982
影响因子：
4.3
通讯作者：
K. Niclas
中科院分区：
文献类型：
--
作者：
K. Niclas
讨论了单端反馈放大器模块中电路元件对噪声系数、增益以及输入输出反射系数的影响。理论结果的支持进行测试的五个阶段的单端放大器。该器件在2.4和8.0 GHz之间具有41.5+-0.8 dB的小信号增益和4.0 dB的最大噪声系数。最大反射系数为1.7：1的输入和1.5：1的输出端子进行了测量。该单元的整体电路尺寸为25x3.6 mm。
The influence of the circuit elements of a single-ended feedback amplifier module on noise figure and gain, as well as on input and output reflection coefficients is discussed. Theoretical results are supported by tests performed on a five-stage single-ended amplifier. The unit exhibits 41.5+-0.8 dB of small-signal gain and a maximum noise figure of 4.0 dB between 2.4 and 8.0 GHz. Maximum reflection coefficients of 1.7:1 for the input and 1.5:1 for the output terminal were measured. The unit's overall circuit dimensions are 25x3.6 mm.