40 keV atomic resolution TEM
40 keV atomic resolution TEM
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DOI：
10.1016/j.ultramic.2011.12.001
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发表时间：
2012-03-01
期刊：
影响因子：
2.2
通讯作者：
Kolmykov, Dmitry V.
中科院分区：
文献类型：
--
作者：
Bell, David C.;Russo, Christopher J.;Kolmykov, Dmitry V.
在这里，我们提出了第一个原子分辨率TEM成像在40千电子伏使用像差校正，单色源TEM。低电压高分辨率电子显微镜（LVHREM）具有几个优点，包括增加非弹性和弹性散射的横截面，增加每个电子的对比度和提高光谱效率，减少离域效应和减少撞击损伤。总之，这些通常提高了对比度，以获得一个大类的样品上的损伤比。三级像差校正现在允许我们在低能量下操作TEM，同时保持原子分辨率，这在以前是不可能的。在低电压下，分辨率的主要限制变成色差限制。我们表明，使用源单色器，我们能够减少色差的影响，并实现可用的高分辨率限制在40千电子伏小于1埃。我们展示了应用该技术对石墨烯和硅进行成像的各种材料的例子，并将原子分辨率图像与电子多层模拟进行了比较。(C)2012爱思唯尔有限公司版权所有。
Here we present the first atomic resolution TEM imaging at 40 keV using an aberration-corrected, monochromated source TEM. Low-voltage High-Resolution Electron Microscopy (LVHREM) has several advantages, including increased cross-sections for inelastic and elastic scattering, increased contrast per electron and improved spectroscopy efficiency, decreased delocalization effects and reduced knockon damage. Together, these often improve the contrast to damage ratio obtained on a large class of samples. Third-order aberration correction now allows us to operate the TEM at low energies while retaining atomic resolution, which was previously impossible. At low voltage the major limitation to resolution becomes the chromatic aberration limit. We show that using a source monochromator we are able to reduce the effect of chromatic aberration and achieve a usable high-resolution limit at 40 keV to less than 1 angstrom. We show various materials' examples of the application of the technique to image graphene and silicon, and compare atomic resolution images with electron multislice simulations. (C) 2012 Elsevier B.V. All rights reserved.