Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
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DOI：
10.1021/cm302881g
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发表时间：
2012-12-11
影响因子：
8.6
通讯作者：
Mitzi, David B.
中科院分区：
文献类型：
--
作者：
Bag, Santanu;Gunawan, Oki;Mitzi, David B.
采用肼基混合颗粒溶液法制备了p型Cu 2 ZnSn（SxSe 1-x）（4）（x = 0; CZTSe）薄膜太阳能电池吸收体，用Ge替代。吸收层的晶体学晶胞参数随着Ge的逐渐掺入而减小。与基于未取代吸收层的器件相比，由40%Ge取代吸收层制成的太阳能电池显示出9.1%的功率转换效率、更高的开路电压和更宽的带隙。该结果显示了使用肼处理方法用Ge取代CZTSe的金属位点以用于进一步器件优化的可能性。在取代的吸收层器件中进一步改进的一个领域包括ZnSe第二相的减少，这在较高Ge含量的膜中是明显的。
The p-type Cu2ZnSn(SxSe1-x)(4) (with x approximate to 0; CZTSe) thin-film solar cell absorber, made from earth-abundant elements, was substituted with Ge using a hydrazine-based mixed particle-solution approach for the film deposition. The crystallographic unit cell parameters of the absorber layer decrease with gradual incorporation of Ge. A solar cell fabricated from a 40% Ge-substituted absorber showed a 9.1% power conversion efficiency, a higher open-circuit voltage, and a wider band gap compared with the device based on the unsubstituted absorber layer. This result shows the possibility of substituting, using the hydrazine-processing approach, the metal site of CZTSe with Ge for further device optimization. One area for further improvement in the substituted absorber layer devices includes reduction of a ZnSe secondary phase, which was apparent in the higher-Ge-content films.