Effect of Postdeposition Oxidation and Subsequent Reduction Annealing on Electric and Optical Properties of Amorphous ZnO – SnO2 Transparent Conducting Films
Effect of Postdeposition Oxidation and Subsequent Reduction Annealing on Electric and Optical Properties of Amorphous ZnO – SnO2 Transparent Conducting Films
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沉积后氧化和随后的还原退火对非晶 ZnO-SnO2 透明导电薄膜电学和光学性能的影响
DOI：
10.1149/1.3528169
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发表时间：
2011
影响因子：
--
通讯作者：
H. Bor
中科院分区：
文献类型：
--
作者：
Chi Wang;Chen Shih;Jenn‐Ming Wu;Wei Chao;H. Bor
采用射频磁控溅射技术，在室温纯氩条件下在玻璃衬底上溅射非晶态ZTO薄膜。沉积后氧化和随后形成的气体还原退火同时提高了非晶态ZTO薄膜的电子浓度、迁移率和透过率。单独的形成气体和氧化退火都不能产生相同的结果。x射线光电子能谱分析表明，第二阶段成形—气体退火同时具有还原成锌和氧化成锌的功能。to Zn的还原提高了ZTO薄膜的导电性，而to的氧化提高了透光率。
Amorphous (ZTO) films were radio frequency-magnetron sputtered on glass substrates at room temperature in pure Ar. Postdeposition oxidation and subsequent forming gas reduction annealing at increased electron concentration, mobility, and transmittance of the amorphous ZTO films simultaneously. Neither forming-gas nor oxidizing annealing alone produced the same results. Based on X-ray photoelectron spectroscopy, the second stage forming-gas annealing in possessed the function of reducing to Zn and oxidizing to simultaneously. The reduction of to Zn enhanced the electrical conductivity of ZTO films, while the oxidization of to resulted in improved transmittances.