Fabrication of crystallized boron films by laser ablation
Fabrication of crystallized boron films by laser ablation
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DOI：
10.1016/j.jssc.2003.12.018
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发表时间：
2004-04
影响因子：
3.3
通讯作者：
Z. Wang;Y. Shimizu;T. Sasaki;K. Kirihara;Kenji Kawaguchi;K. Kimura;N. Koshizaki
中科院分区：
文献类型：
--
作者：
Z. Wang;Y. Shimizu;T. Sasaki;K. Kirihara;Kenji Kawaguchi;K. Kimura;N. Koshizaki
在电炉内的石英玻璃管腔内，利用脉冲激光烧蚀技术，成功地在石英衬底上制备了含有非晶态硼相的多晶β-菱形硼膜。薄膜的结晶度很大程度上取决于炉的温度和背景氩气的压力。实验室内的高温高压适合结晶硼膜的制备。在1000℃，100Pa的温度下获得了最佳的晶体膜（未形成b2o3相）。XPS测试表明，在良好结晶的制备条件下，主要污染物为碳和氧，氧硼原子比为0.05。在相同压力和温度条件下，将激光能量降低到150mJ/脉冲，膜的表面粗糙度降低。
Polycrystalline β-rhombohedral boron films mixed with amorphous boron phase have been successfully fabricated on quartz substrates using pulsed laser ablation in a quartz glass tube chamber placed in an electric furnace. The crystallinity of the films strongly depended on the temperature of the furnace and the pressure of background argon gas. High temperature and high pressure in the chamber were suitable for crystallized boron film preparation. The best crystalline films (without B2O3phase formation) were obtained at 1000°C, 100Pa. XPS measurements demonstrated that the major contaminants were carbon and oxygen, and the atomic ratio of oxygen to boron was 0.05 under the preparation conditions of well-crystallized films. The surface roughness of the films decreased by lowering laser energy to 150mJ/pulse under the same pressure and temperature conditions.