Micron channel length ZnO thin film transistors using bilayer electrodes
Micron channel length ZnO thin film transistors using bilayer electrodes
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使用双层电极的微米沟道长度ZnO薄膜晶体管
DOI：
10.1016/j.jcis.2022.04.016
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发表时间：
2022-05-07
影响因子：
9.9
通讯作者：
Liu, Chang
中科院分区：
文献类型：
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作者：
Li, Sizhe;Chen, Xue;Liu, Chang
微型发光二极管（Micro-LED）目前正吸引越来越多的关注。具有微米沟道长度的薄膜晶体管（TFT）可用于驱动微发光二极管。TFT的关键参数，如迁移率，ION/IOFF和阈值电压仍需要改进。在这项研究中，我们提出和实验证明，使用双层电极，以克服短沟道效应时，沟道长度缩小到3 lm的ZnO TFT。Ti、Mo和Sn中间层不仅作为扩散阻挡层阻止Cu原子从顶部电极迁移，而且还增强了金属电极在ZnO沟道层上的粘附能。使用Cu/Ti双层电极的ZnO TFT表现出最好的性能，例如，高迁移率为45.3 cm（2）V（-1）s（-1），高离子/离子截止比为4.28 × 109，低亚阈值为0.24 V/dec，适当的阈值电压为1.13 V。高迁移率可归因于势垒高度的显著降低和空间电荷层的轻微变窄，高的ION/ IOFF比与ON态条件下的高电子浓度有关。因此，使用Cu/Ti双层电极的ZnO TFT可用于下一代显示器。(C)2022年爱思唯尔公司All rights reserved.
Micro light-emitting diodes (Micro-LEDs) are currently attracting more and more attention. Thin film transistors (TFTs) with micron channel lengths can be used to drive Micro-LEDs. The key parameters of TFTs, such as mobility, ION/IOFF and threshold voltage, still need to be improved. In this study, we propose and experimentally demonstrate ZnO TFTs using bilayer electrodes to overcome the short channel effects when the channel length is scaled down to 3 lm. Ti, Mo and Sn interlayers not only serve as diffusion barriers to prohibit migration of Cu atoms from the top electrodes, but also enhance adhesive energy of the metal electrodes on ZnO channel layers. ZnO TFTs using Cu/Ti bilayer electrodes exhibit the best performance, e.g., a high mobility of 45.3 cm(2)V(-1)s(-1), a high ION/IOFF ratio of 4.28 x 109, a low subthreshold of 0.24 V/dec and a proper threshold voltage of 1.13 V. The high mobility can be attributed to a significant decrease of the barrier height and a slight narrowing of the space charge layer, and the high ratio of ION/ IOFF is concerned with the high electron concentration under an ON-state condition. Thus, ZnO TFTs using Cu/Ti bilayer electrodes can be used in next-generation displays. (C)& nbsp;2022 Elsevier Inc. All rights reserved.