Structural characterization of GaN laterally overgrown on a (111)Si substrate
Structural characterization of GaN laterally overgrown on a (111)Si substrate
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DOI：
10.1063/1.1394716
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发表时间：
2001-08-13
影响因子：
4
通讯作者：
Hibino, M
中科院分区：
文献类型：
--
作者：
Tanaka, S;Honda, Y;Hibino, M
使用透射电子显微镜，我们已经表征了横向过度生长的GaN晶体中的缺陷结构，直接生长在SiO2条纹图案化的（111）Si衬底上的金属有机物气相外延使用AlGaN作为中间层。条纹窗口的宽度和周期分别为1和2 μ m。在[11（2）over tilde]取向的条纹图案化衬底上获得的完全聚结的2 μ m厚GaN晶体的平均穿透位错密度类似于2 × 10（9）cm（-2）。穿透位错密度的减少是掩模的聚结前部处的横向生长和位错反应的结果。另一方面，在[1（1）over bar 0]取向的条带图案化衬底上生长期间，谷和凹坑倾向于保留在掩模上。两种晶体中都存在裂纹。(C)2001年美国物理学会。
Using transmission electron microscopy, we have characterized defect structures in laterally overgrown GaN crystals, grown directly on SiO2 stripe-patterned (111)Si substrates by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. The width and the period of the stripe windows were nominally 1 and 2 mum, respectively. The average threading dislocation density for a completely coalesced 2-mum-thick GaN crystal obtained on the [11 (2) over tilde]-oriented stripe-patterned substrate was similar to 2x10(9) cm(-2). The reduction in threading dislocation density is a consequence of the lateral growth and dislocation reactions at the coalesced front of the mask. On the other hand, valleys and pits tend to remain on the mask during the growth on the [1 (1) over bar0]-oriented stripe-patterned substrate. Cracks were present in both crystals. (C) 2001 American Institute of Physics.