Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure: Spin photodetector
Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure: Spin photodetector
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DOI：
10.1063/1.3418441
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发表时间：
2010-06
影响因子：
3.2
通讯作者：
K. Ando;M. Morikawa;T. Trypiniotis;Y. Fujikawa;C. Barnes;E. Saitoh
中科院分区：
文献类型：
--
作者：
K. Ando;M. Morikawa;T. Trypiniotis;Y. Fujikawa;C. Barnes;E. Saitoh
利用Pt/GaAs混合结构中的光致逆自旋霍尔效应，实现了光偏振信息到电压的直接转换。在GaAs层中，通过圆偏振光的照射产生自旋极化载流子，其通过界面在Pt层中诱导纯自旋电流。纯自旋电流转换成电动势使用的逆自旋霍尔效应（ISHE）在Pt层。尽管存在Pt顶层，但发现光致ISHE产生的电动势与样品外部照射光的圆偏振度成正比，这与基于光传播分析的计算结果一致多层结构。这种光偏振信息到电压的转换在室温下工作，没有偏置电压和磁场，因此可以用作自旋光电探测器。
The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers are generated by the illumination of circularly polarized light, which induces a pure-spin current in the Pt layer through the interface. The pure-spin current is converted into an electromotive force using the inverse spin-Hall effect (ISHE) in the Pt layer. The electromotive force due to the photoinduced ISHE was found to be proportional to the degree of circular polarization of the illuminated light outside the sample in spite of the presence of the Pt top layer, which is consistent with a calculation based on the analysis for light propagation in multilayer structures. This conversion of light-polarization information into electric voltage works at room temperature without bias voltage and magnetic fields, and thus can be used as a spin photodetector.