Structural and Optical Characteristics of Gallium Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis
Structural and Optical Characteristics of Gallium Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis
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DOI：
10.1149/1.1342183
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发表时间：
2001-02
影响因子：
3.9
通讯作者：
A. Ortiz;J. Alonso;E. Andrade;C. Urbiola
中科院分区：
文献类型：
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作者：
A. Ortiz;J. Alonso;E. Andrade;C. Urbiola
以乙酰丙酮镓为原料，水为氧化剂，采用超声喷雾热分解法制备了非晶氧化镓薄膜。样品在850°C退火1h后，出现Ga 2 O3的β晶相.卢瑟福背散射结果表明，无论是作为沉积和退火薄膜的化学计量的化学成分没有纳入碳杂质。红外光谱测量表明，在所研究的任何薄膜中没有O-H和Ga-OH自由基的掺入。非晶态薄膜的红外光谱在400 ~ 900 cm-1范围内有较宽的吸收带，这是某些非晶态金属氧化物的典型特征。同时，退火薄膜的红外光谱在450和670 cm-1处出现了Ga 2 O3 β相的特征峰.薄膜的折射率显示出强烈的变化，从非晶薄膜的1.846到退火薄膜的1.935。的光学带隙能量值为4.94 eV的沉积膜和4.99 eV的退火膜。所有这些变化都与退火膜的不同微观结构有关。
Amorphous gallium oxide thin films were prepared by the ultrasonic spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. Samples annealed at 850°C during 1 h show the crystalline β-phase of Ga 2 O 3 . Rutherford backscattering results indicate that both as-deposited and annealed films have the stoichiometric chemical composition without incorporation of carbon impurities. Infrared (IR) spectroscopic measurements show that there is no incorporation of O-H and Ga-OH radicals in any of the studied films. The IR spectra for amorphous films show a broad absorption band from 400 to 900 cm -1 , typical for some amorphous metallic oxides. Meanwhile, for the annealed films the IR spectra show well-defined peaks located at 450 and 670 cm -1 related to the β-phase of Ga 2 O 3 . The refractive index of the films shows a strong change from 1.846 for the amorphous films to 1.935 for the annealed ones. The optical bandgap energy values are 4.94 eV for the as-deposited films and 4.99 eV for the annealed films. All these changes are associated with a different microstructure of the annealed films.