Femtosecond pulse generation in passively mode locked InAs quantum dot lasers
Femtosecond pulse generation in passively mode locked InAs quantum dot lasers
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DOI：
10.1063/1.4822433
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发表时间：
2013-09-23
影响因子：
4
通讯作者：
O'Driscoll, I.
中科院分区：
文献类型：
--
作者：
Finch, P.;Blood, P.;O'Driscoll, I.
InAs两段被动锁模量子点激光器的光脉冲持续时间从250 K时的8.4 ps减少到20 K时的290 fs，减少了29倍，光学带宽相应增加。使用速率方程的增益和发射光谱的速率方程分析表明，这是由于在低温、随机布居制度下，载流子到润湿层的发射速率非常低，这使得整个不均匀分布的点能够充当独立的振荡器。(C)2013 AIP Publishing LLC.
Optical pulse durations of an InAs two-section passively mode-locked quantum dot laser with a proton bombarded absorber section reduce from 8.4 ps at 250K to 290 fs at 20 K, a factor of 29, with a corresponding increase in optical bandwidth. Rate equation analysis of gain and emission spectra using rate equations suggests this is due to the very low emission rate of carriers to the wetting layer in the low temperature, random population regime which enables dots across the whole inhomogeneous distribution to act as independent oscillators. (C) 2013 AIP Publishing LLC.