Electron transport in wurtzite indium nitride
Electron transport in wurtzite indium nitride
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DOI：
10.1063/1.366641
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发表时间：
1998-01-15
影响因子：
3.2
通讯作者：
Eastman, LF
中科院分区：
文献类型：
--
作者：
O'Leary, SK;Foutz, BE;Eastman, LF
我们提出了纤锌矿氮化铟的速度场特征，使用集合蒙特卡罗方法确定。结果表明，当掺杂浓度为1.0 X 10(17) cm（-3）时，氮化铟在室温下表现出极高的峰漂移速度，为4.3 X 10(7) cm/s。我们还证明了氮化铟的饱和漂移速度为2.5 X 10(7) cm/s，与氮化镓相当，比砷化镓大得多。我们的研究结果表明，氮化铟的输运特性优于氮化镓和砷化镓，在较宽的温度范围内，从150到500 K，掺杂浓度高达1.0 X 10(19) cm（-3）。因此，氮化铟在器件应用方面具有相当大的潜力。(C) 1998美国物理研究所。[s0021 - 8979(98) 02202 - 6]。
We present the velocity-field characteristics of wurtzite indium nitride, determined using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high peak drift velocity at room temperature, 4.3 X 10(7) cm/s, at a doping concentration of 1.0 X 10(17) cm(-3). We also demonstrate that the saturation drift velocity of indium nitride, 2.5 X 10(7) cm/s, is comparable to that of gallium nitride, and much larger than that of gallium arsenide. Our results suggest that the transport characteristics of indium nitride are superior to those of gallium nitride and gallium arsenide, over a wide range of temperatures, from 150 to 500 K, and doping concentrations, up to 1.0 X 10(19) cm(-3). Hence, indium nitride has considerable potential for device applications. (C) 1998 American Institute of Physics. [S0021-8979(98)02202-6].