Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
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DOI：
10.1063/1.4747532
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发表时间：
2012-08-20
影响因子：
4
通讯作者：
Speck, James S.
中科院分区：
文献类型：
--
作者：
Wu, Yuh-Renn;Shivaraman, Ravi;Speck, James S.
我们报告了纳米级铟涨落对多量子阱 (QW) 发光二极管 (LED) 物理性能的影响。通过原子探针断层扫描分析商业级 c 面 LED，并提取铟成分分布。通过非常细网格的二维泊松和漂移扩散求解器分析了涨落程度和量子阱数量的影响，并将实验结果与简单的普通量子阱模型进行了比较。研究表明，铟涨落将显着影响器件的内量子效率、下降行为和电流-电压曲线。包括铟波动的影响可以更好地预测器件性能。 (C) 2012 年美国物理研究所。 [http://dx.doi.org/10.1063/1.4747532]
We report on the influence of nanoscale indium fluctuations on physical properties for multiple quantum well (QW) light emitting diodes (LEDs). A commercial grade c-plane LED was analyzed by atom probe tomography, and the indium composition distribution was extracted. The influence of the degree of fluctuation and number of quantum wells were analyzed by a two-dimensional Poisson and drift-diffusion solver with very fine mesh and compared to the experimental result and a simple normal quantum well model. The studies show that the indium fluctuation will significantly impact the device's internal quantum efficiency, droop behavior, and current-voltage curves. Including the influence of indium-fluctuation gives a better prediction of the device performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747532]