Chemical-state analysis for low-dimensional Si and Ge films on graphite
Chemical-state analysis for low-dimensional Si and Ge films on graphite
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石墨上低维 Si 和 Ge 薄膜的化学态分析
DOI：
10.1063/1.1605253
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发表时间：
2003
影响因子：
3.2
通讯作者：
Y. Baba
中科院分区：
文献类型：
--
作者：
K. G. Nath;I. Shimoyama;T. Sekiguchi;Y. Baba
用同步辐射光电子能谱研究了石墨表面低维半导体Si和Ge的化学相互作用和电子结构。芯能级谱，如Si 1s，Ge 2p和C 1s，表明吸附原子和衬底原子之间没有发生化学相互作用，并且在室温下沉积吸附原子后石墨的电子结构保持完整。 Si 1s和Ge 2p光电子能谱表明，石墨上的Si和Ge膜保持其元素形式。 然而，Si和Ge薄膜的电子结构被发现是厚度依赖性的。在较厚的膜中，如Si 5.5 A或Ge 4.2 A，检测到单个块状成分。在较薄的膜，如Si 2.7 A或Ge 0.3 A的情况下，观察到一些额外的组件在结合能高于块状组件。我们将这些峰归因于半导体纳米结构，例如，纳米线，以及由纳米团簇组成的单个或聚合链。
Synchrotron radiation photoemission spectroscopy has been used to study the chemical interaction and the electronic structures of low-dimensional semiconducting Si and Ge on a graphite surface. The core level spectra, such as Si 1s, Ge 2p, and C 1s, show that no chemical interaction occurs between adatoms and the substrate atoms, and that the electronic structures of graphite remain intact upon deposition of the adatoms at room temperature. The Si 1s and Ge 2p photoemission spectra reveal that Si and Ge films on graphite remain in their elemental form. However, the electronic structures of both Si and Ge films are found to be thickness dependent. In the thicker films, such as Si 5.5 A or Ge 4.2 A, a single bulk-like component is detected. In the case of thinner films, such as Si 2.7 A or Ge 0.3 A, some additional components are observed at binding energies higher than the bulk-like component. We attribute these peaks to semiconductor nanostructures, for example, nanowires, and individual or polymerized chains consisting of nanoclusters.