High responsivity near-infrared photodetectors in evaporated Ge-on-Si
High responsivity near-infrared photodetectors in evaporated Ge-on-Si
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DOI：
10.1063/1.4747213
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发表时间：
2012-08
影响因子：
4
通讯作者：
V. Sorianello;A. D. Iacovo;L. Colace;A. Fabbri;L. Tortora;E. Buffagni;G. Assanto
中科院分区：
文献类型：
--
作者：
V. Sorianello;A. D. Iacovo;L. Colace;A. Fabbri;L. Tortora;E. Buffagni;G. Assanto
锗被认为是在硅光子芯片上单片集成近红外探测器的最合适的半导体。在这里，我们报告的热蒸发制造的锗硅近红外光电探测器，证明使用磷自旋掺杂剂，以补偿由位错引入的受主态。探测器的1.55 μm响应度高达0.1A/W，比未掺杂器件高出两个数量级以上，与最先进的p-i-n光电二极管相当。这种方法使得近红外传感器与硅光子学的简单且低成本的单片集成成为可能。
Germanium is considered the most suitable semiconductor for monolithic integration of near-infrared detectors on silicon photonic chips. Here we report on Ge-on-Si near-infrared photodetectors fabricated by thermal evaporation, demonstrating the use of phosphorus spin-on-dopant to compensate the acceptor states introduced by dislocations. The detectors exhibit 1.55 μm responsivities as high as 0.1 A/W, more than two orders of magnitude larger than in undoped devices and comparing well with state-of-the-art p-i-n photodiodes. This approach enables simple and low-cost monolithic integration of near-infrared sensors with silicon photonics.