Observation of a hexagonal BN surface layer on the cubic BN film grown by dual ion beam sputter deposition
Observation of a hexagonal BN surface layer on the cubic BN film grown by dual ion beam sputter deposition
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DOI：
10.1063/1.118402
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发表时间：
1997-01
影响因子：
4
通讯作者：
Kyoungwan Park;Donghyuck Lee;Ki-Bok Kim;D. Moon
中科院分区：
文献类型：
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作者：
Kyoungwan Park;Donghyuck Lee;Ki-Bok Kim;D. Moon
采用双离子束溅射沉积法制备了立方氮化硼（c-BN）薄膜，并利用角分辨原位XPS（x射线光电子能谱）分析了c-BN薄膜的生长机理。在c-BN膜的表层得到的XPS谱中，出现了仅在六方氮化硼（h-BN）相中观察到的B 1 s峰的π键振动卫星。这可以清楚地证明，c-BN相通过初始形成的h-BN相的转变而生长，并且该转变是由离子轰击期间在次表面区域中积累的压应力引起的。
Cubic-boron nitride (c-BN) thin films were grown by dual ion beam sputter deposition and the growth mechanism was studied using angle resolved in-situ XPS (x-ray photoelectron spectroscopy) analysis. The π bond shake-up satellite of the B 1s peak, which is observed only in a hexagonal boron nitride (h-BN) phase, appeared in the XPS spectrum obtained for the surface layer of the c-BN film. This can be a clear evidence that the c-BN phase grows via the transformation of an initially formed h-BN phase and the transformation is induced by the compressive stress accumulated in the subsurface region during ion bombardment.