The characteristics of GaN-based blue LED on Si substrate
The characteristics of GaN-based blue LED on Si substrate
复制标题
DOI：
10.1016/j.jlumin.2006.01.084
复制
发表时间：
2007
影响因子：
3.6
通讯作者：
Chuanbing Xiong;F. Jiang;Wenqing Fang;Li Wang;Chunnan Mo;Hechu Liu
中科院分区：
文献类型：
--
作者：
Chuanbing Xiong;F. Jiang;Wenqing Fang;Li Wang;Chunnan Mo;Hechu Liu
采用金属有机化学气相沉积(MOCVD)方法在Si(111)衬底上生长了InGaN多量子阱(MQW)发光二极管(LED)，并成功地将其键合并转移到新的Si衬底上。通过化学腐蚀硅衬底和电感耦合等离子体(ICP)腐蚀缓冲层，制备了垂直结构的GaN蓝色发光二极管。研究了横向结构LED(生长在硅衬底上)和垂直结构LED(粘结在新硅衬底上)的特性，与横向结构LED相比，垂直结构LED的性能有了明显的提高。这种性能的改善是由于垂直LED的拉应力和串联电阻比横向LED的小。垂直LED芯片和垂直LED灯之间的电致发光差异可以用散热的不同来解释。
InGaN multiple quantum well (MQW) light-emitting diodes (LEDs), grown by metalorganic chemical vapor deposition (MOCVD) on Si (111) substrates, were successfully bonded and transferred onto new Si substrate. After chemical etching Si substrate and inductively coupled plasma (ICP) etching buffer layer, vertical structure GaN blue LEDs were fabricated. The characteristics of the lateral structure LEDs (grown on Si substrate) and the vertical structure LEDs (bonded on new Si substrate) have been investigated, and the performance of the vertical structure LEDs have obviously been improved compared to the lateral structure LEDs. The improved performance is due to the smaller tensile stress and series resistance in the vertical LEDs than that in lateral LEDs. The electroluminescence difference between vertical LEDs chips and the vertical LEDs lamps can be explained by the difference in heat dissipation.