One-dimensional epitaxial growth of indium on a self-assembled atomic-scale bismuth template
One-dimensional epitaxial growth of indium on a self-assembled atomic-scale bismuth template
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自组装原子尺度铋模板上一维外延生长铟
DOI：
10.1088/0957-4484/17/2/014
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发表时间：
2006
期刊：
影响因子：
3.5
通讯作者：
K. Miki
中科院分区：
文献类型：
--
作者：
J. Owen;K. Miki
在自组装模板上通过外延生长形成了一维铟岛。模板由双纳米线组成，其宽度为1.5 nm，长度可超过500 nm。岛屿符合模板宽度，长度超过100海里。岛的第一层形成了In和Bi原子的新型链结构，这说明了纳米晶体在模板上的外延生长。第二层显示一个六边形结构19 Å或2.5二聚体行宽。在沉积了两层铟之后，外延生长饱和。随着进一步沉积，观察到向3D In液滴生长的转变。
1D indium islands have been formed by epitaxial growth on a self-assembled template. The templates are formed from Bi nanolines, which are 1.5 nm wide, and can be over 500 nm in length. The islands conform to the template width and are over 100 nm long. The first layer of the island forms a novel chain structure of In and Bi atoms, which accounts for the epitaxial growth of the nanocrystals on the template. The second layer shows a hexagonal structure 19 Å or 2.5 dimer rows wide. Epitaxial growth saturates after two layers of In have been deposited. With further deposition, a transition to the growth of 3D In droplets is observed.