FANO RESONANCES IN CHALCOGEN-DOPED SILICON
FANO RESONANCES IN CHALCOGEN-DOPED SILICON
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DOI：
10.1103/physrevb.31.8000
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发表时间：
1985-01-01
影响因子：
3.7
通讯作者：
GRIMMEISS, HG
中科院分区：
文献类型：
--
作者：
JANZEN, E;GROSSMANN, G;GRIMMEISS, HG
给出了与硅中S、Se和Te有关的不同中心的光激发谱，显示了由于共振电子-声子相互作用在连续体部的结构。讨论了这些Fano共振的理论方面，为解释和分析结果提供了基础。该分析允许将结合能分配给几个不能通过直接光激发观察到的束缚态。给出了一个理论模型，解释了吸收光谱和光导光谱中Fano共振的差异。文中还给出了Si：Te中振荡光电导的一个明显的例子，并用光学声子的级联衰变以及在低温下增强对最慢传导电子的俘获来解释。
Photoexcitation spectra showing structure in the continuum part due to resonant electron-phonon interaction are presented for various centers related to S, Se, and Te in silicon. Theoretical aspects of these Fano resonances are discussed to provide a basis for the interpretation and analysis of results. The analysis allows binding energies to be assigned to several bound states not observable by direct optical excitation. A theoretical model is presented which offers an explanation for the differences between Fano resonances in absorption and photoconductivity spectra. A clear case of oscillating photoconductivity in Si: Te is also presented and interpreted in terms of cascade decay involving optical phonons together with enhanced capture of the slowest conduction electrons at low temperature.