Radiative Recombination Changes under Light-Soaking in CsPbBr3 Films on TiO2 and Insulating Glass Contacts: Interface versus Bulk Effects
Radiative Recombination Changes under Light-Soaking in CsPbBr3 Films on TiO2 and Insulating Glass Contacts: Interface versus Bulk Effects
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DOI：
10.1021/acsaem.9b00335
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发表时间：
2019-05-01
影响因子：
6.4
通讯作者：
Gottesman, Ronen
中科院分区：
文献类型：
--
作者：
Hu, Jiangang;Gouda, Laxman;Gottesman, Ronen
研究了不同厚度的CsPbBr3薄膜在半导体接触和绝缘接触光浸泡下的稳态光致发光(PL)，结果表明，PL的可逆变化完全依赖于接触的性质和膜的厚度。玻璃/Al_2O_3上CsPbBr3在50-100 nm处的荧光增强，在较厚的层中发光降低，没有厚度依赖的发光。这些观测用空间电荷分布模型来描述，该模型解释了在光浸泡下，由于向上的能带弯曲、增强界面处的发光和远离界面的非辐射复合而抑制了电子注入到二氧化钛中的迁移。
The steady-state photoluminescence (PL) of CsPbBr3 films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50-100 nm CsPbBr3 on TiO2 increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr3 on glass/Al2O3. These observations are described using a spatial charge distribution model which interprets the migration of Br- and V-Br(+) under light-soaking as suppressing electron injection into the TiO2 due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.