Spin-Orbit-Torque Switching Mediated by an Antiferromagnetic Insulator
Spin-Orbit-Torque Switching Mediated by an Antiferromagnetic Insulator
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DOI：
10.1103/physrevapplied.11.044070
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发表时间：
2019-04
影响因子：
4.6
通讯作者：
Hailong Wang;Joseph Finley;Pengxiang Zhang;Jiahao Han;J. Hou;Luqiao Liu
中科院分区：
文献类型：
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作者：
Hailong Wang;Joseph Finley;Pengxiang Zhang;Jiahao Han;J. Hou;Luqiao Liu
自旋轨道扭矩作为磁存储器和自旋逻辑器件的切换机制被广泛研究。在典型的器件配置中，大量电流流过铁磁金属的分流路径，从而显着增加能耗。这项工作表明，自旋扭矩传递可以在反铁磁绝缘体上实现：通过在重金属层中施加电流，可以在磁性自由层中实现磁切换，尽管中间有反铁磁绝缘体层。因此，自旋轨道扭矩装置中电隔离的读取和写入路径，对于节能有利的磁控制是可能的。
Spin-orbit torque is widely studied as a switching mechanism for magnetic memory and spin logic devices. In typical device configurations, a lot of current flows through the shunting path of the ferromagnetic metal, significantly increasing energy consumption. This work demonstrates that spin-torque transfer can be realized across an antiferromagnetic insulator: By applying current in the heavy-metal layer, one can achieve magnetic switching in the magnetic free layer, despite the antiferromagnetic-insulator layer in between. Thus electrically isolated reading and writing paths in spin-orbit-torque devices, for energy-thrifty favorable magnetic control, are possible.