Engineered doping of organic semiconductors for enhanced thermoelectric efficiency
Engineered doping of organic semiconductors for enhanced thermoelectric efficiency
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DOI：
10.1038/nmat3635
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发表时间：
2013-08-01
期刊：
影响因子：
41.2
通讯作者：
Pipe, K. P.
中科院分区：
文献类型：
--
作者：
Kim, G-H.;Shao, L.;Pipe, K. P.
近年来出现了热电优值ZT的显著改进，主要是由于无机半导体（1）（ISC）中的材料组成和纳米结构的工程化。然而，许多现有的高ZT材料是基于低丰度元素的，这对规模化提出了挑战，因为除了脆性和大面积沉积的困难之外，它们还需要高材料成本。在这里，我们展示了一种策略，以提高ZT导电聚合物和其他有机半导体（OSC）的基础元素是地球丰富的。通过最小化总掺杂剂体积，我们表明，所有三个参数构成ZT变化的方式，使ZT增加，这是在形成鲜明对比的ISC，这些参数有权衡。当最大化OSC中的ZT时，发现减少掺杂剂体积与优化载流子浓度一样重要。在聚（3，4-乙撑二氧噻吩）中用掺杂剂聚（苯乙烯磺酸酯）实施该策略，我们在室温下实现ZT = 0.42。
Significant improvements to the thermoelectric figure of merit ZT have emerged in recent years, primarily due to the engineering of material composition and nanostructure in inorganic semiconductors(1) (ISCs). However, many present high-ZT materials are based on low-abundance elements that pose challenges for scale-up, as they entail high material costs in addition to brittleness and difficulty in large-area deposition. Here we demonstrate a strategy to improve ZT in conductive polymers and other organic semiconductors (OSCs) for which the base elements are earth-abundant. By minimizing total dopant volume, we show that all three parameters constituting ZT vary in a manner so that ZT increases; this stands in sharp contrast to ISCs, for which these parameters have trade-offs. Reducing dopant volume is found to be as important as optimizing carrier concentration when maximizing ZT in OSCs. Implementing this strategy with the dopant poly(styrenesulphonate) in poly(3,4-ethylenedioxythiophene), we achieve ZT = 0.42 at room temperature.