Investigations on the Passivation Mechanism of AlN:H and AlN:H-SiN:H Stacks
Investigations on the Passivation Mechanism of AlN:H and AlN:H-SiN:H Stacks
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AlN:H 和 AlN:H-SiN:H 叠层钝化机理的研究
DOI：
10.1016/j.egypro.2014.08.062
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
R. Preu
中科院分区：
文献类型：
--
作者：
G. Krugel;Franziska Jenkner;A. Moldovan;W. Wolke;J. Rentsch;R. Preu
在本文中，氢化氮化铝层（AlN：H）作为一个优秀的钝化层的硅表面的性能进行了检查。采用GI-XRD、FTIR、SEM、HR-TEM、电晕充电和厚度依赖的表面钝化测量等多种测量技术对AlN：H块体的结构和化学性质进行了分析。基于AlN中电离点缺陷的电荷状态，提出了在硅界面形成负固定电荷的模型，并将AlN：H和SiNx：H叠层引入硅光致发光器件中，研究了它们与两种不同类型的低温氧化硅薄层的结合。使用前述叠层，对于高度掺杂的p型硅和高度掺杂的n型硅呈现了优异的钝化结果。织构样品的饱和电流密度为75 Ω/sq.磷发射极可以与通常使用的SiNx：H一样有效地钝化，从而允许657 mV的最大开路电压。这通过使用这些叠层作为组合的抗反射涂层和钝化层测量p型太阳能电池的电池参数来支持。此外，钝化水平达到高效率70 Ω/sq。硼发射极几乎与优异的钝化PECVD Al 2 O3/SiNx叠层一样高。最大开路电压为696 mV时，饱和电流密度可达61 fA/cm 2。这表明本发明的包含AlN：H的叠层也可以用作n型电池中的组合的抗反射涂层和钝化层。
In this paper, the properties of hydrogenated aluminum nitride layers (AlN:H) as an excellent passivation layer of silicon surfaces are examined. The structural and chemical properties of the AlN:H bulk are analyzed using a great variety of measurements techniques such as GI-XRD, FTIR, SEM, HR-TEM, corona charging and a thickness dependent measurements of the surface passivation. A model for the formation of negative fixed charges at the interface to silicon is presented based on the charge state of ionized point defects in AlN.Additionally, stacks of AlN:H and SiNx:H are introduced into silicon photovoltaics and their combination with two different types of thin low temperature silicon oxide layers is studied. Excellent passivation results are presented for highly doped p-type silicon and highly doped n-type silicon using the previous described stacks. Emitter saturation current densities of textured samples show, that 75 Ω/sq. phosphorous emitter can be passivated as efficient as with the typically used SiNx:H allowing maximum open circuit voltages of 657 mV. This is supported by measurement of cell parameters of p-type solar cells using these stacks as a combined anti-reflective coating and passivation layer. Furthermore, the passivation level reached for high efficiency 70 Ω/sq. boron emitters is nearly as high as with excellent passivating PECVD Al2O3/SiNxstacks. Emitter saturation current densities down to 61 fA/cm2are presented corresponding to a maximum open circuit voltage of 696 mV. This indicates that the invented stacks containing AlN:H can also be applied as combined anti-reflective coating and passivation layers in n-type cells.