Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates
Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates
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Si 衬底上应变平衡 Si0.73Ge0.27/Si 分布式布拉格反射器的制作
DOI：
10.1063/1.1385196
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发表时间：
2001
影响因子：
4
通讯作者：
J. Zhang
中科院分区：
文献类型：
--
作者：
K. Kawaguchi;S. Koh;Y. Shiraki;J. Zhang
设计了应变平衡的Si_（0.73）Ge_（0.27）/Si分布布拉格反射器（DBR），克服了应变累积对反射器数目的限制。采用11和25个镜对的Si 0.73 Ge 0.27/Si DBR的拉曼光谱表明，SiGe和Si层在SiGe虚拟衬底上处于压应变和张应变状态。25对SiGe/Si DBR在1.44 μm处获得了80%的反射率。然而，与11对样品的6.3nm相比，25对样品的表面粗糙度增加到约46 nm。
Strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors (DBRs) which were designed to overcome the limitation of the number of pairs originating from the strain accumulation were fabricated. Raman spectra of Si0.73Ge0.27/Si DBRs with 11 and 25 mirror pairs showed that SiGe and Si layers were under compressive and tensile strain on SiGe virtual substrates as designed. A record reflectivity of 80% was achieved at 1.44 μm in SiGe/Si DBRs with 25 pairs. The surface roughness of the 25 pair sample, however, was increased to about 46 nm compared with 6.3 nm of the 11 pair sample.