Near-field measurements of VLSI devices
Near-field measurements of VLSI devices
复制标题
VLSI 器件的近场测量
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
W. Cui
中科院分区：
文献类型：
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作者：
K. Slattery;J. W. Neal;W. Cui
本文介绍了一种测量微处理器和其他VLSI器件封装表面近场电场的技术。该技术使用精密步进电机在待测设备表面高精度地放置电场探头。整个设备的结构分辨率约为400-600 /spl mu/m。典型的扫描在一个可变的扫描区域累积10000个数据点，这个区域可以由器件封装尺寸或芯片尺寸来定义。表征一个器件需要在基本时钟频率的谐波上进行一系列重复的表面扫描。本文介绍了由处理器、闪存和专用集成电路（ASIC）组成的多芯片模块（MCM）表面的近场电场。在实际电路应用中对MCM进行了测量。
This short paper describes a technique for the measurement of the electric near field at the package surface of microprocessors and other VLSI devices. The technique uses precision stepper motors for highly accurate placement of an electric field probe at the surface of the device to be measured. Structural resolution across the device is on the order of 400-600 /spl mu/m. Typical scans accumulate 10000 data points across a variable scan area, which can be defined by device package dimensions or by the die dimensions. Characterizing a device involves a repeated series of surface scans at harmonics of the fundamental clock frequency. This paper describes the electric near field at the surface of a multichip module (MCM) composed of a processor, a flash memory, and application specific integrated circuit (ASIC). The MCM was measured while in operation in the actual circuit application.