Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors
Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors
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DOI:
10.1016/j.ssc.2005.08.011
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发表时间:
2005-11
影响因子:
2.1
通讯作者:
Y. H. Kwon;T. Kang;H. Cho;T. W. Kim
中科院分区:
文献类型:
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作者:
Y. H. Kwon;T. Kang;H. Cho;T. W. Kim