Low-temperature growth and photoluminescence property of ZnS nanoribbons.
Low-temperature growth and photoluminescence property of ZnS nanoribbons.
复制标题
DOI:
10.1021/jp052199d
复制
发表时间:
2005-09
期刊:
影响因子:
--
通讯作者:
Zengxing Zhang;Jianxiong Wang;Huajun Yuan;Yan Gao;Dongfang Liu;L. Song;Y. Xiang;Xiaowei Zhao;Lifeng Liu;S. Luo;Xinyuan Dou;S. Mou;Weiya Zhou;S. Xie
中科院分区:
文献类型:
--
作者:
Zengxing Zhang;Jianxiong Wang;Huajun Yuan;Yan Gao;Dongfang Liu;L. Song;Y. Xiang;Xiaowei Zhao;Lifeng Liu;S. Luo;Xinyuan Dou;S. Mou;Weiya Zhou;S. Xie
At a low temperature of 450 degrees C, ZnS nanoribbons have been synthesized on Si and KCl substrates by a simple chemical vapor deposition (CVD) method with a two-temperature-zone furnace. Zinc and sulfur powders are used as sources in the different temperature zones. X-ray diffraction (XRD), selected area electron diffraction (SEAD), and transmission electron microscopy (TEM) analysis show that the ZnS nanoribbons are the wurtzite structure, and there are two types-single-crystal and bicrystal nanoribbons. Photoluminescence (PL) spectrum shows that the spectrum mainly includes two parts: a purple emission band centering at about 390 nm and a blue emission band centering at about 445 nm with a weak green shoulder around 510 nm.