XPS analysis of nano‐thin films on substrate
XPS analysis of nano‐thin films on substrate
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基底上纳米薄膜的 XPS 分析
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Zihan Ding
中科院分区：
文献类型：
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作者：
S. Mao;Z. M. Zhang;K. Tökési;A. Csík;J. Tóth;R. J. Bereczky;Zihan Ding
对于表面局域化的纳米结构，仅基于峰值强度分析的XPS定量是不准确的。在这项工作中，我们开发了一种更精细和更方便的算法，通过考虑跟随薄膜信号峰值的约100 eV区域的本底，对衬底上的纳米薄膜进行XPS定量。本文对W/SiO_2覆层样品进行了研究。并将理论计算结果与实验结果进行了比较，提出了一种适用于薄膜厚度分析的算法。版权所有©2008 John Wiley&Sons，Ltd.
For a surface localized nano‐structure, the XPS quantification based only on peak intensity analysis is inaccurate. In this work, we have developed an algorithm that is more elaborate and convenient for application to XPS quantification of nanoscale thin film on substrate by considering the background in a region of about 100 eV following the film signal peak. A W/SiO2 overlayer sample is investigated in this work. Theoretical evaluation of the spectra is compared with the experimental result and a pertinent algorithm is derived for application to the film thickness analysis. Copyright © 2008 John Wiley & Sons, Ltd.