Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact
Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact
复制标题
DOI：
10.35848/1882-0786/ac4c35
复制
发表时间：
2022-02-01
影响因子：
2.3
通讯作者：
Hirayama, Yoshiro
中科院分区：
文献类型：
--
作者：
Hayafuchi, Yasuaki;Konno, Ryota;Hirayama, Yoshiro
偶分母态由于其在未来量子技术中的可能应用而引起了人们的极大关注。在这封信中，我们首先报告了3/2对角电阻，表明在高迁移率（而不是超高迁移率）单层二维（2D）GaAs晶片上制造的纳米尺寸的三栅量子点接触（QPC）中存在3/2态。中心栅极在实现QPC的3/2状态中起着至关重要的作用。我们使用传统的QPC器件观察到3/2态，这是半导体量子器件的合适构建模块，为基于半导体的量子技术的发展铺平了新的道路。
The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC's 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.