Quantization of multiparticle Auger rates in semiconductor quantum dots
Quantization of multiparticle Auger rates in semiconductor quantum dots
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DOI：
10.1126/science.287.5455.1011
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发表时间：
2000-02-11
期刊：
影响因子：
56.9
通讯作者：
Bawendi, MG
中科院分区：
文献类型：
--
作者：
Klimov, VI;Mikhailovsky, AA;Bawendi, MG
我们已经解析了半径在1到4纳米之间的近单分散硒化镉量子点中2 -、3 -和4 -电子 - 空穴对态的单指数弛豫动力学。对不同多对态所测量的离散弛豫常数进行比较表明，载流子衰减率与载流子浓度呈三次方关系，这是俄歇过程的特征。我们观察到，在量子受限区域，俄歇常数强烈依赖于尺寸，并且随着量子点尺寸的减小（与半径的三次方成比例）而减小。
We have resolved single-exponential relaxation dynamics of the 2-, 3-, and 4-electron-hole pair states in nearly monodisperse cadmium selenide quantum dots with radii ranging from 1 to 4 nanometers. Comparison of the discrete relaxation constants measured for different multiple-pair states indicates that the carrier decay rate is cubic in carrier concentration, which is characteristic of an Auger process. We observe that in the quantum-confined regime, the. Auger constant is strongly size-dependent and decreases with decreasing the quantum dot size as the radius cubed.