High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN
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DOI：
10.1063/1.124337
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发表时间：
1999-07-12
影响因子：
4
通讯作者：
Tarsa, EJ
中科院分区：
文献类型：
--
作者：
Parish, G;Keller, S;Tarsa, EJ
带边波长为 285 nm 的日盲紫外光电二极管是在通过金属有机化学气相沉积生长的横向外延过度生长的 GaN 上制造的。二极管的电流-电压测量显示 -5 V 时暗电流密度低至 10 nA/cm(2)。光谱响应测量显示峰值响应高达 0.05 A/W。对于 90% 至 10% 的下降时间，这些二极管的响应时间经测量低至 4.5 ns。为了进行比较，使用沉积在位错 GaN 上的相同 p-i-n 结构制造了二极管。这些二极管的暗电流密度高出许多数量级，并且截止不那么尖锐，并且在脉冲激励下有明显的慢尾。 (C) 1999 年美国物理研究所。 [S0003-6951(99)04428-9]。
Solar-blind ultraviolet photodiodes with a band-edge wavelength of 285 nm were fabricated on laterally epitaxially overgrown GaN grown by metalorganic chemical vapor deposition. Current-voltage measurements of the diodes exhibited dark current densities as low as 10 nA/cm(2) at -5 V. Spectral response measurements revealed peak responsivities of up to 0.05 A/W. Response times for these diodes were measured to be as low as 4.5 ns for 90%-to-10% fall time. For comparison, diodes were fabricated using the same p-i-n structure deposited on dislocated GaN. These diodes had dark current densities many orders of magnitude higher, as well as a less sharp cutoff, and a significant slow tail under impulse excitation. (C) 1999 American Institute of Physics. [S0003-6951(99)04428-9].