Band energy diagram of CdTe thin film solar cells
Band energy diagram of CdTe thin film solar cells
复制标题
DOI：
10.1016/s0040-6090(01)01528-0
复制
发表时间：
2002-02-01
期刊：
影响因子：
2.1
通讯作者：
Jaegermann, W
中科院分区：
文献类型：
--
作者：
Fritsche, J;Kraft, D;Jaegermann, W
了解太阳能电池的能带图对于基本了解其功能至关重要。我们使用光电子能谱（PES）作为系统研究 CdTe 太阳能电池界面形成的强大工具，其中不同层 CdS/SnO2。在模型实验中，CdTe/CdS 和 Te/CdTe 通过热蒸发逐步沉积。这些研究的结果表明，与其他研究相比，能量转换异质结不是简单的 n-CdS/p-CdTe 接触。尽管深度分析揭示了均匀的本征 CdTe 体层，但假设接触形成和 CdCl2 激活形成 n-i-p CdTe 吸收器。这种非理想条件可能会强烈影响转换效率的优化过程。主要限制显然是由于背接触的形成。我们的结果并未证实电化学形成的 Te 层在 CdTe 层和金属背接触之间产生良好的欧姆接触。根据模型实验，我们假设形成了隧道接触。 (C) 2002 Elsevier Science B.V. 保留所有权利。
The knowledge of band energy diagrams of solar cells is essential for a fundamental understanding of their function. We have used photoelectron spectroscopy (PES) as a powerful tool for a systematic study of the formation of interfaces of CdTe solar cells in which the different layers CdS/SnO2. CdTe/CdS and Te/CdTe are deposited step by step by thermal evaporation in model experiments. The results of these studies show that in contrast to other investigations the energy converting heterojunction is not a simple n-CdS/p-CdTe contact. Although depth profiling reveals a homogeneously intrinsic CdTe bulk layer, contact formation and CdCl2-activation are assumed to form an n-i-p CdTe absorber. Such non-ideal conditions may strongly affect optimization processes of conversion efficiencies. The main limitations are evidently due to back-contact formation. Our results do not confirm that the electrochemically formed Te layer produces a good ohmic contact between the CdTe layer and the metallic back contact. From model experiments, we assume the formation of a tunneling contact, instead. (C) 2002 Elsevier Science B.V. All rights reserved.