Superjunction nanoscale partially narrow mesa IGBT towards superior performance
Superjunction nanoscale partially narrow mesa IGBT towards superior performance
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超结纳米级部分窄台面 IGBT 迈向卓越性能
DOI：
10.1088/1674-1056/26/3/038502
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发表时间：
2017
影响因子：
1.7
通讯作者：
Zheng-Sheng Han
中科院分区：
文献类型：
--
作者：
Qiaoqun Yu;Jiang Lu;Hai-Nan Liu;Jia-Jun Luo;Bo Li;Li-Xin Wang;Zheng-Sheng Han
我们详细研究了超结（SJ）纳米级部分窄台面（PNM）绝缘栅双极晶体管（IGBT）结构。这种结构是通过将纳米级PNM结构和SJ结构结合在一起而形成的。它具有超低饱和电压（Vce(sat)）和低关断损耗（Eoff），同时保持其他器件参数。仿真结果表明，与传统的1.2 kV沟槽IGBT相比，该结构的Vce（sat）降至0.94 V，接近1.2 kV IGBT的理论极限。同时，下降时间从109.7 ns减少到12 ns， Eoff仅为传统结构的37%。由于Vce（sat）和Eoff具有纳米级的台面宽度和SJ结构，两者之间具有优越的权衡特性。此外，在极窄的平台结构中，由于集电极诱导的垒降低效应（CIBL），没有观察到短路退化现象。因此，采用宽的浮动p井技术可以获得足够的短路能力。基于这些结构优势，具有纳米级台面宽度的SJ-PNM-IGBT在IGBT参数限制下具有潜在的优越综合性能。
We present a detailed study of a superjunction (SJ) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage (Vce(sat)) and low turn-off loss (Eoff) while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the Vce(sat) of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT. Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce(sat) and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering (CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.