Imaging strain-localized excitons in nanoscale bubbles of monolayer WSe2at room temperature
Imaging strain-localized excitons in nanoscale bubbles of monolayer WSe2at room temperature
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DOI：
10.1038/s41565-020-0730-5
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发表时间：
2020-07-13
影响因子：
38.3
通讯作者：
Schuck, P. James
中科院分区：
文献类型：
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作者：
Darlington, Thomas P.;Carmesin, Christian;Schuck, P. James
在单层过渡金属二硫属化物中，局部应变可用于设计单光子源的纳米阵列。尽管有很强的经验相关性，激子和局部晶体结构之间的纳米级相互作用，产生这些量子发射器是知之甚少。在这里，我们结合联合收割机室温纳米光学成像和光谱分析的激子在单层WSe（2）的纳米气泡与原子模型，研究如何应变诱导纳米级的限制电位和局域激子状态。低缺陷浓度的单层中的纳米气泡的成像揭示了在单个纳米气泡的外围周围的多个位点处的约10 nm的长度尺度上的局部激子，与连续模型的应变预测形成鲜明对比。这些结果与理论约束势原子地从测量的纳米气泡的形貌。我们的研究结果提供了实验和理论的见解应变诱导激子局域化的长度尺度相称的激子尺寸，实现关键的纳米尺度的结构和性能信息的量子发射体在单层WSe2。室温纳米光学成像和光谱学和原子理论相结合，揭示了高度本地化的激子态在单层WSe2的局域应变的纳米气泡。
In monolayer transition-metal dichalcogenides, localized strain can be used to design nanoarrays of single photon sources. Despite strong empirical correlation, the nanoscale interplay between excitons and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopic analysis of excitons in nanobubbles of monolayer WSe(2)with atomistic models to study how strain induces nanoscale confinement potentials and localized exciton states. The imaging of nanobubbles in monolayers with low defect concentrations reveals localized excitons on length scales of around 10 nm at multiple sites around the periphery of individual nanobubbles, in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials atomistically derived from the measured topographies of nanobubbles. Our results provide experimental and theoretical insights into strain-induced exciton localization on length scales commensurate with exciton size, realizing key nanoscale structure-property information on quantum emitters in monolayer WSe2.A combination of room-temperature nano-optical imaging and spectroscopy and atomistic theory reveals highly localized exciton states in nanobubbles of localized strain in monolayer WSe2.