Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors
Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors
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DOI：
10.1063/1.4973462
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发表时间：
2017-01-02
影响因子：
4
通讯作者：
Ando, Y.
中科院分区：
文献类型：
--
作者：
Nakano, T.;Oogane, M.;Ando, Y.
我们开发了CoFeB/MgO/CoFeB磁性隧道结（MTJ）与垂直磁化的合成反铁磁（p-SAF）参考层的磁传感器应用。的MTJ表现出线性隧道磁阻曲线的面外施加的磁场与动态范围超过+/- 2.5千奥斯特，这是更广泛的比那些在CoFeB/MgO/CoFeB-MTJ报告的日期。MTJ传感器的性能度量，即，灵敏度和非线性显著地取决于自由层的各向异性场。我们解释了一个简单的模型的基础上Stoner-Wohlfarth和Slonczewski模型的依赖性，这给了我们一个指导方针，设计传感器的性能指标。这些发现表明，具有p-SAF参考层的MTJ是宽动态范围磁传感器的有希望的候选者。由AIP出版社出版。
We developed CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with a perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layer for magnetic sensor applications. The MTJs exhibited linear tunnel magnetoresistance curves to out-of-plane applied magnetic fields with dynamic ranges more than +/- 2.5 kOe, which are wider than those in CoFeB/MgO/CoFeB-MTJs reported to date. The performance metrics of MTJ sensors, i.e., sensitivity and nonlinearity, depend significantly on the anisotropy field of the free layer. We explained the dependences by a simple model based on the Stoner-Wohlfarth and Slonczewski models, which gives us a guideline to design the sensor performance metrics. These findings demonstrated that MTJs with a p-SAF reference layer are promising candidates for wide-dynamic-range magnetic sensors. Published by AIP Publishing.