In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si
In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si
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无催化剂 InAs 纳米线原位掺杂 Si：Si 的生长、多型性和局部振动模式
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
L. Geelhaar
中科院分区：
文献类型：
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作者：
E. Dimakis;M. Ramsteiner;Chang;A. Trampert;A. Davydok;A. Biermanns;U. Pietsch;H. Riechert;L. Geelhaar
研究了原位掺杂硅纳米线的生长和结构。采用分子束外延法在Si（111）衬底上无催化剂生长纳米线。Si的供应影响了生长动力学，影响了纳米线的尺寸，但不影响结构多型化的程度，这一点总是明显的。通过拉曼光谱测定，Si作为取代杂质仅在In位点上掺入，这使其成为供体。先前未知的Si相关拉曼峰位于355和360 cm−1，基于它们在偏振相关测量中的对称性，作为独立Si杂质在in位点上的两个局部振动模式，分别沿着和垂直于纤锌矿InAs晶体的c轴。
Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm−1 were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.