On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1-x.AsyP1-y epitaxial layers
On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1-x.AsyP1-y epitaxial layers
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旋节线分解 InxGa1-x.AsyP1-y 外延层的弹性弛豫和长波长微结构
DOI:
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发表时间:
1985
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影响因子:
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通讯作者:
A. Howie
中科院分区:
文献类型:
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作者:
M. Treacy;J. Gibson;A. Howie
Abstract The origin of the long-wavelength (100–300 nm) quasi-periodic microstructure observed in transmission electron microscopy studies of spinodally decomposed In Ga1−x As y P1−y alloys has been investigated. The contrast is well explained by diffraction effects arising from lattice plane bending near the surfaces of the thinned specimens, such as would be induced by elastic relaxation of shear stresses accompanying a quasi-periodic lattice modulation. Excellent qualitative agreement between calculated and experimental contrasts lends weight to the claim that these contrasts, observed over part of the composition range of liquid phase epitaxy grown InxGa1−xAs y P1−y alloys, are associated with spinodal decomposition. The accompanying strain modulation amplitude is of the order of 10−3. It is suggested that speckle contrast on a smaller scale (5–15 nm) in this material may also be related to composition variations. More generally, the nature of near-surface elastic relaxation in compositionally modulat...