Mechanism of hot electron electroluminescence in GaN-based transistors
Mechanism of hot electron electroluminescence in GaN-based transistors
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DOI：
10.1088/0022-3727/49/43/435101
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发表时间：
2016-11
期刊：
影响因子：
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通讯作者：
T. Brazzini;Huarui Sun;F. Sarti;J. Pomeroy;C. Hodges;M. Gurioli;A. Vinattieri;M. Uren;M. Kuball
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文献类型：
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作者：
T. Brazzini;Huarui Sun;F. Sarti;J. Pomeroy;C. Hodges;M. Gurioli;A. Vinattieri;M. Uren;M. Kuball
研究了 AlGaN/GaN 高电子迁移率晶体管中热电子电致发光 (EL) 的性质，并将其归因于轫致辐射。光谱分布首次针对多层器件结构造成的干扰效应进行了校正，这对于正确解释数据、避免光谱中的伪影和结果的误解至关重要。假定轫致辐射为唯一来源，导出了发射光光谱分布的解析表达式，并与常用于电子温度提取的高能尾部的简化指数模型进行比较：获得的电子温度结果比近似指数模型低约 20%。不同晶圆器件的 EL 强度比较说明了 EL 强度对材料质量的依赖性。电致发光的偏振也证实轫致辐射是发射光的主要来源，排除了其他可能的主要机制。
The nature of hot electron electroluminescence (EL) in AlGaN/GaN high electron mobility transistors is studied and attributed to Bremsstrahlung. The spectral distribution has been corrected, for the first time, for interference effects due to the multilayered device structure, and this was shown to be crucial for the correct interpretation of the data, avoiding artefacts in the spectrum and misinterpretation of the results. An analytical expression for the spectral distribution of emitted light is derived assuming Bremsstrahlung as the only origin and compared to the simplified exponential model for the high energy tail commonly used for electron temperature extraction: the electron temperature obtained results about 20% lower compared to the approximated exponential model. Comparison of EL intensity for devices from different wafers illustrated the dependence of EL intensity on the material quality. The polarization of electroluminescence also confirms Bremsstrahlung as the dominant origin of the light emitted, ruling out other possible main mechanisms.