Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
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DOI：
10.1021/am404540z
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发表时间：
2014-01-08
影响因子：
9.5
通讯作者：
Sun, Xiao Wei
中科院分区：
文献类型：
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作者：
Yang, Xuyong;Ma, Yanyan;Sun, Xiao Wei
利用溶液处理的氧化钨和氧化锌分别作为空穴和电子传输层，制备了具有双面金属氧化物(MO)纳米粒子(NP)电荷传输层的高效稳定的量子点发光二极管(QLED)。除电极外，所有其他层都是通过简单的旋涂方法沉积的。基于MONP的QLED显示出优异的器件性能，在发射波长为516 nm时的峰值亮度为21300 cd/m(2)，最大电流效率为4.4cd/A，低开启电压为3V。更重要的是，通过高效的器件结构设计，这些器件在器件稳定性方面有了显著的提高，在室温下测得的95h的工作寿命几乎是标准器件的20倍。
An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cd/m(2) at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.