Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths
复制标题
DOI：
10.1063/1.5005173
复制
发表时间：
2017-11
影响因子：
4
通讯作者：
Yu Han;Qiang Li;Si Zhu;K. Ng;K. Lau
中科院分区：
文献类型：
--
作者：
Yu Han;Qiang Li;Si Zhu;K. Ng;K. Lau
本文报道了在（001）Si衬底上生长的InP/InGaAs纳米脊的长径比俘获连续激光输出。在InP纳米脊内的多InGaAs脊量子威尔斯阱被设计为用于1500 nm波段发射的有源增益材料。通过透射电子显微镜和显微光致发光测试证实了InGaAs量子威尔斯阱具有良好的结晶质量和光学特性。将InP/InGaAs纳米脊转移到SiO2/Si衬底上后，在室温下观察到放大的法布里-珀罗谐振模，并在4.5 K连续光泵浦下观察到1400 nm波段的多模激射行为。这一结果标志着集成直接生长在微电子标准（001）Si衬底上的InP/InGaAs纳米激光器迈出了重要的一步。在InP纳米脊内的多InGaAs脊量子威尔斯阱被设计为用于1500 nm波段发射的有源增益材料。通过透射电子显微镜和显微光致发光测试证实了InGaAs量子威尔斯阱具有良好的结晶质量和光学特性。将InP/InGaAs纳米脊转移到SiO2/Si衬底上后，在室温下观察到放大的法布里-珀罗谐振模，并在4.5 K连续光泵浦下观察到1400 nm波段的多模激射行为。因此，这一结果标志着集成直接生长在微电子标准（001）硅衬底上的InP/InGaAs纳米激光器的重要一步。
We report continuous-wave lasing from InP/InGaAs nanoridges grown on a patterned (001) Si substrate by aspect ratio trapping. Multi-InGaAs ridge quantum wells inside InP nanoridges are designed as active gain materials for emission in the 1500 nm band. The good crystalline quality and optical property of the InGaAs quantum wells are attested by transmission electron microscopy and microphotoluminescence measurements. After transfer of the InP/InGaAs nanoridges onto a SiO2/Si substrate, amplified Fabry-Perot resonant modes at room temperature and multi-mode lasing behavior in the 1400 nm band under continuous-wave optical pumping at 4.5 K are observed. This result thus marks an important step towards integrating InP/InGaAs nanolasers directly grown on microelectronic standard (001) Si substrates.We report continuous-wave lasing from InP/InGaAs nanoridges grown on a patterned (001) Si substrate by aspect ratio trapping. Multi-InGaAs ridge quantum wells inside InP nanoridges are designed as active gain materials for emission in the 1500 nm band. The good crystalline quality and optical property of the InGaAs quantum wells are attested by transmission electron microscopy and microphotoluminescence measurements. After transfer of the InP/InGaAs nanoridges onto a SiO2/Si substrate, amplified Fabry-Perot resonant modes at room temperature and multi-mode lasing behavior in the 1400 nm band under continuous-wave optical pumping at 4.5 K are observed. This result thus marks an important step towards integrating InP/InGaAs nanolasers directly grown on microelectronic standard (001) Si substrates.