Electronic structure of III-V ternary semiconductors
Electronic structure of III-V ternary semiconductors
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III-V族三元半导体的电子结构
DOI：
10.1088/0953-8984/1/30/005
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
K. Jain
中科院分区：
文献类型：
--
作者：
V. B. Gera;R. Gupta;K. Jain
用紧束缚哈密顿量在相干势近似(CPA)下计算了三元合金GaxIn1-xP、GaAs1-xPx、GaxIn1-xAs和InAs1-xPx的电子能带结构。首次报道了GaIn1-xAs和InAs1-xPx系统的CPA能带。将计算的重要的直接和间接能隙随成分x及其弯曲的变化与已有的实验数据进行了比较，发现对所研究的所有四种三元合金都有很好的一致性。
Electronic band structures of the ternary alloys GaxIn1-xP, GaAs1-xPx, GaxIn1-xAs and InAs1-xPx are calculated in the coherent-potential approximation (CPA) using the tight-binding Hamiltonian. The CPA energy bands are reported for the first time for the GaxIn1-xAs and InAs1-xPx systems. The calculated variation of important direct and indirect energy gaps with composition x and their bowing is compared with the available experimental data, and good agreement is found for all the four ternary alloys studied.