Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
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DOI：
10.1103/physrevb.76.075332
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发表时间：
2007-08-01
影响因子：
3.7
通讯作者：
Tabe, Michiharu
中科院分区：
文献类型：
--
作者：
Moraru, Daniel;Ono, Yukinori;Tabe, Michiharu
我们已经通过数值和实验证明了在单门随机多隧道结中可以实现量子化电子转移。基于库仑封锁正统理论的大量蒙特卡罗模拟表明，在栅极电压的每个周期中，电容的非均匀分布在能量上有利于电子在电极之间逐一穿梭。我们在硅纳米线场效应晶体管沟道中适量掺磷的实验结果支持了这一数值预测。器件通道内的电离掺杂剂局部调制电位，形成自然随机的一维多隧道结阵列。在交流栅极操作下，在I-d-V-d特性中出现了+/- nef方向的小电流平台或弯曲，这表明在这种自然无序的系统中可以实现量子化电子转移。
We have demonstrated numerically and experimentally that quantized electron transfer can be achieved in single-gated random multiple tunnel junctions. Extensive Monte Carlo simulations based on Coulomb blockade orthodox theory show that nonhomogeneous distributions of capacitances energetically favor one-by-one electron shuttling between the electrodes during each cycle of a gate voltage. This numerical prediction is supported by our experimental results on Si nanowire field-effect transistors with the channel moderately doped with phosphorus. Ionized dopants within the device channel locally modulate the potential, creating a naturally random one-dimensional multiple-tunnel-junction array. Under ac-gate operation, small current plateaus or inflections aligned at +/- nef appear in the I-d-V-d characteristics, suggesting that quantized electron transfer is achievable in such naturally disordered systems.