Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
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连续波激光横向结晶在玻璃衬底上生长准单晶硅-锗薄膜
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
A. Hara
中科院分区：
文献类型：
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作者：
K. Kitahara;Kenta Hirose;J. Suzuki;K. Kondo;A. Hara
采用连续波激光横向晶化(CLC)技术在玻璃衬底上生长硅锗(SiGe)薄膜。用光学显微镜和电子显微镜对薄膜中Ge的晶体结构和分布进行了表征。Ge和Si的复合和CLC的使用导致了激光扫描区长度大于100µm的晶体的生长，而在纯Si薄膜中没有形成这样长的晶体。对于Si0.7Ge0.3，晶面法线的取向为<；111>；。大多数晶界是电不活跃的Σ3重合位点阵。高角度晶界和随机晶界很少出现。因此，晶化部分可视为准单晶。用成分过冷模型讨论了Ge的生长方式和偏析。
Continuous wave laser lateral crystallization (CLC) technology was applied to grow silicon–germanium (SiGe) thin films on glass substrates. The crystal structure and distribution of Ge in the films were characterized by optical and electron microscopies. The compounding of Ge with Si and the use of CLC resulted in the growth of crystals with lengths greater than 100 µm in the laser-scanning region, whereas such long crystals were not formed in pure Si films. For Si0.7Ge0.3, the orientation of the crystal surface normal was along <111>. Most crystalline boundaries were Σ3 coincidence site lattices that were electrically inactive. High-angle or random grain boundaries were rarely found. Thus, the crystallized part can be regarded as a quasi-single crystal. The growth mode and segregation of Ge are discussed in terms of a constitutional undercooling model.