Thermal Boundary Resistance of W/Al2O3 Interface in W/Al2O3/W Three-Layered Thin Film and Its Dependence on Morphology
Thermal Boundary Resistance of W/Al2O3 Interface in W/Al2O3/W Three-Layered Thin Film and Its Dependence on Morphology
复制标题
W/Al2O3/W三层薄膜中W/Al2O3界面的热边界热阻及其形貌依赖性
DOI：
10.7567/jjap.52.065802
复制
发表时间：
2013
影响因子：
1.5
通讯作者：
Y. Shigesato
中科院分区：
文献类型：
--
作者：
Shizuka Kawasaki;Yuichiro Yamashita;Nobuto Oka;T. Yagi;J. Jia;N. Taketoshi;T. Baba;Y. Shigesato
研究了W/Al_2O_3/W三层薄膜中W/Al_2O_3界面热阻与界面形貌的关系。通过磁控溅射使用W靶（99.99%）和Al 2 O3靶（99.99%）制备了层状结构，即厚度为1至50 nm的Al 2 O3薄层被厚度为100 nm的顶部和底部W层覆盖。通过结构分析证实了多晶W和非晶Al 2 O3薄膜的制备。底层W层/Al 2 O3层和Al 2 O3层/顶层W层界面的形貌为粗糙度约为1 nm的波状结构。采用脉冲光加热热反射技术测量了材料的热物性和界面热阻。W/Al 2 O3界面的界面热阻为1.9×10-9 m2 KW-1，相当于3.7nm厚的Al 2 O3膜或120 nm厚的W膜的热阻。
We investigated the dependence of the thermal boundary resistance of the W/Al2O3 interface in W/Al2O3/W three-layered thin films on the interface morphology. The layered structures, Al2O3 thin layers with thicknesses from 1 to 50 nm covered by top and bottom W layers with a thickness of 100 nm, were fabricated by magnetron sputtering using a W target (99.99%) and an Al2O3 target (99.99%). The fabrication of polycrystalline W and amorphous Al2O3 films was confirmed by structural analysis. The morphology of the bottom W layer/Al2O3 layer and Al2O3 layer/top W layer interfaces showed a wavelike structure with a roughness of about 1 nm. Thermophysical properties and thermal boundary resistance were measured by a pulsed light heating thermoreflectance technique. The thermal boundary resistance of the W/Al2O3 interface was 1.9×10-9 m2 K W-1, which corresponds to the thermal resistance of a 3.7-nm-thick Al2O3 film or a 120-nm-thick W film.