Synthesis of Al2O3–SiO2 Films by Ar/O2 Plasma‐Enhanced CVD from Alkoxide Precursors
Synthesis of Al2O3–SiO2 Films by Ar/O2 Plasma‐Enhanced CVD from Alkoxide Precursors
复制标题
DOI：
10.1002/cvde.200504223
复制
发表时间：
2006-05
影响因子：
--
通讯作者：
Yuan-shi Li;S. Shimada;A. Hirose
中科院分区：
文献类型：
--
作者：
Yuan-shi Li;S. Shimada;A. Hirose
以醇盐溶液为前驱体，采用液相注入氧等离子体增强化学气相沉积法在800 °C下制备了非晶态Al 2 O3、SiO2和Al 2 O3-SiO2复合薄膜。前驱体的进料速率影响薄膜的结构和形貌，通过调节起始原料中的Si/Al比可以控制薄膜的成分。当钢基体暴露于含KCl蒸汽的高温气氛中时，用上述膜涂覆的钢基体获得了优异的保护。
Amorphous Al2O3, SiO2, and Al2O3–SiO2composite films have been produced at 800 °C from alkoxide solution precursors by liquid‐injection oxygen plasma enhanced CVD. The films' structures and morphologies are affected by the feed rate of the liquid precursor and their compositions can be controlled by adjusting the Si/Al ratios in the starting source. Steel substrates coated with the above films gained excellent protection when they were exposed to high temperature atmosphere containing KCl vapor.